Abstract: The gallium-nitride (GaN) high-electron-mobility transistors (HEMT) devices have great potential for high-power, high-temperature, and high-frequency applications. However, it is challenging ...
Abstract: Wide bandgap (WBG) technology-based Silicon Carbide (SiC) modules have emerged as an essential technology for power electronics converters. The SiC modules stand out for their improved ...
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