An oscilloscope and a device under test (DUT) constitute a de-facto system. In it, the most overlooked element is the interface between the two: the oscilloscope’s probes. Test personnel simply grab ...
Capacitance-voltage (C-V) testing is widely used to determine semiconductor parameters, particularly in MOSCAP and MOSFET structures. However, other types of semiconductor devices and technologies ...
Scanning Capacitance Microscopy (SCM) and Scanning Spreading Resistance Microscopy (SSRM) are both well-established scanning probe-based techniques for two-dimensional carrier profiling. Driven by the ...
Over the past decade, demand for nano-electrical characterization has rapidly increased due to the continuous miniaturization of electronic devices. The semiconductor and microelectronics industries ...
Engineers usually have access to signal and function generators, as well as frequency counters and oscilloscopes, but they may not have access to capacitance or inductance meters. Using the test setup ...
Imec has developed a new failure analysis method to localize interconnection failures in 2.5D/3D stack die with through-silicon vias (TSVs). This technique is called LICA, which stands for ...
During the manufacture of semiconductor wafers, thickness measurement forms an important part of this process, since it provides process engineers with the information required to ensure that ...
With a sampling rate of 50 kHz, the PCap04 capacitive sensing front-end IC from ams achieves a measurement resolution of 8 aF. Designers can configure the device for high resolution, high speed, or ...
AMS has announced a configurable capacitive sensing front end which allows speed and resolution to be traded to optimise designs. Called PCap04, it can capture and digitise 50,000 times per second at ...
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